?2001 fairchild semiconductor corporation rev. a1, june 2001 ksc2331 npn epitaxial silicon transistor absolute maximum ratings t a =25 c unless otherwise noted electrical characteristics t a =25 c unless otherwise noted h fe classification symbol parameter ratings units v cbo collector-base voltage 80 v v ceo collector-emitter voltage 60 v v ebo emitter-base voltage 8 v i c collector current 700 ma p c collector power dissipation 1 w t j junction temperature 150 c t stg storage temperature -55 ~ 150 c symbol parameter test condition min. typ. max. units bv cbo collector-base breakdown voltage i c =100 a, i e =0 80 v bv ceo collector-emitter breakdown voltage i c =10ma, i b =0 60 v bv ebo emitter-base breakdown voltage i e =10 a, i c =0 8 v i cbo collector cut-off current v cb =60v, i e =0 0.1 a i ebo emitter cut-off current v eb =5v, i c =0 0.1 a h fe dc current gain v ce =2v, i c =50ma 40 240 v ce (sat) collector-emitter saturation voltage i c =500ma, i b =50ma 0.2 0.7 v v be (sat) base-emitter saturation voltage i c =500ma, i b =50ma 0.86 1.20 v f t current gain bandwidth product v ce =10v, i c =50ma 30 50 mhz c ob output capacitance v cb =10v, i e =0, f=1mhz 8 pf classification r o y h fe 40 ~ 80 70 ~ 140 120 ~ 240 ksc2331 low frequency amplifier & medium speed switching ? complement to ksa931 ? high collector-base voltage : v cbo =80v ? collector current : i c =700ma ? collector dissipation : p c =1w to-92l 1 1. emitter 2. collector 3. base
?2001 fairchild semiconductor corporation ksc2331 rev. a1, june 2001 typical characteristics figure 1. static characteristic figure 2. dc current gain figure 3. base-emitter saturation voltage collector-emitter saturation voltage figure 4. base-emitter on voltage figure 5. safe operating area figure 6. power derating 0 5 10 15 20 25 30 35 40 45 50 55 0 20 40 60 80 100 120 140 160 180 200 i b = 1.2ma i b = 0.2ma i b = 1.4ma i b = 1.0ma i b = 0.8ma i b = 0.6ma i b = 0.4ma i c [ma], collector current v ce [v], collector-emitter voltage 1 10 100 1000 0 40 80 120 160 200 240 v ce = 2v h fe , dc current gain i c [ma], collector current 1 10 100 1000 0.01 0.1 1 10 i c = 10 i b v ce (sat) v be (sat) v be (sat), v ce (sat)[v], saturation voltage i c [ma], collector current 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1 10 100 1000 v ce = 2v i c [ma], collector current v be [v], base-emitter voltage 1 10 100 1000 10 100 1000 10000 1. t a = 25 o c 2. *single pulse dc *200ms i c [ma], collector current v ce [v], collector-emitter voltage 0 25 50 75 100 125 150 175 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 p c [w], power dissipation t a [ o c], amibient temperature
package demensions ?2001 fairchild semiconductor corporation rev. a1, june 2001 ksc2331 dimensions in millimeters 4.90 0.20 0.50 0.10 1.27typ [1.27 0.20 ] 0.45 0.10 0.45 0.10 0.80 0.10 0.70max. 1.00max. 2.54 typ 8.00 0.20 1.70 0.20 1.00 0.10 13.50 0.40 3.90 0.20 3.90 0.20 1.45 0.20 to-92l
disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: ?2001 fairchild semiconductor corporation rev. h3 trademarks the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms datasheet identification product status definition advance information formative or in design this datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production this datasheet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. no identification needed full production this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. obsolete not in production this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. a cex? bottomless? coolfet? crossvolt ? densetrench? dome? ecospark? e 2 cmos? ensigna? fact? fact quiet series? fast ? fastr? frfet? globaloptoisolator? gto? hisec? isoplanar? littlefet? microfet? microwire? optologic? optoplanar? pacman? pop? power247? powertrench ? qfet? qs? qt optoelectronics? quiet series? slient switcher ? smart start? star*power? stealth? supersot?-3 supersot?-6 supersot?-8 syncfet? trutranslation? tinylogic? uhc? ultrafet ? vcx? star*power is used under license
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